The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Sep. 19, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wen-Li Chiu, Kaohsiung, TW;
Hsin-Che Chiang, Taipei, TW;
Chun-Sheng Liang, Puyan Township, Changhua County, TW;
Kuo-Hua Pan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a FinFET device structure is provided. The method for forming a FinFET device structure includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method for forming a FinFET device structure also includes forming a first spacer over a sidewall of the gate structure and forming a second spacer over the first spacer. The method for forming a FinFET device structure further includes etching the second spacer to form a gap and forming a mask layer over the gate structure and the first spacer after the gap is formed. In addition, the mask layer extends into the gap in such a way that the mask layer and the fin structure are separated by an air gap in the gap.