logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11101284 B1

PDFFull Text
Expired
Date of Patent:
Aug. 24, 2021

Filed:

Dec. 18, 2018

Three-dimensional memory device containing etch stop structures and methods of making the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Jayavel Pachamuthu, San Jose, CA (US);

Hiroyuki Kinoshita, San Jose, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Makoto Dei, Yokkaichi, JP;

Junji Oh, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Yu Chen

Int. Cl.
CPC ...
H01L 27/11548 (2017.01); H01L 27/11575 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 27/11526 (2017.01); H01L 27/11573 (2017.01); H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02532 (2013.01); H01L 21/266 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/26533 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/8221 (2013.01); H01L 23/5226 (2013.01); H01L 27/11519 (2013.01); H01L 27/11526 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/4916 (2013.01);
Abstract

A method of forming a semiconductor structure includes providing a dopant species selected from carbon, boron, nitrogen or oxygen into an upper portion of a semiconductor region to form a doped etch stop semiconductor material portion over a remaining semiconductor material portion, forming an overlying material portion over the etch stop semiconductor material portion, etching through the overlying material portion by an etch process that removes the overlying material portion selective to a material of the etch stop semiconductor material portion, and depositing at least one fill material over the etch stop semiconductor material portion.

Find Patent Forward Citations

Loading…