The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Oct. 21, 2019
Macronix International Co., Ltd., Hsinchu, TW;
Yu-Wei Jiang, Hsinchu, TW;
Jia-Rong Chiou, Hsinchu County, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a channel element, a memory element, and an electrode element. The channel element includes a first channel portion, a second channel portion, and a middle channel portion between the first channel portion and the second channel portion. The first channel portion has a first sidewall channel surface and a second sidewall channel surface opposing to the first sidewall channel surface. The middle channel portion has a third sidewall channel surface and a fourth sidewall channel surface opposing to the third sidewall channel surface. The first sidewall channel surface and the second sidewall channel surface of the first channel portion are outside the third sidewall channel surface and the fourth sidewall channel surface of the middle channel portion respectively. A memory cell is defined in the memory element between the channel element and the electrode element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile