The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Oct. 08, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Shaofeng Ding, Suwon-si, KR;
Jeonghoon Ahn, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first electrode disposed on a substrate. A capacitor dielectric layer is on the first electrode. A second electrode is on the capacitor dielectric layer. A first insulating layer is on the first and second electrodes and the capacitor dielectric layer. A first interconnection structure is on the first insulating layer and connected to the first electrode. A second interconnection structure is on the first insulating layer and connected to the second electrode. A second insulating layer is on the first and second interconnection structures. A plurality of connection structures are configured to pass through the second insulating layer and be connected to the first and second interconnection structures. Each of the first and second interconnection structures has an aluminum layer.