The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
May. 26, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Bin Huang, Hsinchu, TW;
Chien-Mao Chen, Zhubei, TW;
Yu-Hsuan Kuo, Taipei, TW;
Shih-Kai Fan, Hsinchu, TW;
Chia-Hung Lai, Hsinchu, TW;
Kang-Min Kuo, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure includes depositing a mask layer over a substrate. The method includes etching the substrate to define a first opening. The method includes depositing a sacrificial material in the first opening. The method includes depositing a dielectric liner along sidewalls of the first opening, wherein a bottom surface of the dielectric liner contacts the sacrificial material. The method includes removing the sacrificial material. The method includes etching the substrate to enlarge the first opening to define a second opening. The second opening includes a first portion extending a first depth from the dielectric material in a first direction perpendicular to a top surface of the substrate, and a second portion extending in a second direction, parallel to the top surface of the substrate. The method includes removing the dielectric liner. The method includes filling the second opening with a dielectric material.