The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jan. 29, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Keunwook Shin, Yongin-si, KR;
Changhyun Kim, Seoul, KR;
Kaoru Yamamoto, Seongnam-si, KR;
Changseok Lee, Seoul, KR;
Hyunjae Song, Hwaseong-si, KR;
Eunkyu Lee, Yongin-si, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Sungjoo An, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01); H01L 29/1606 (2013.01);
Abstract
Provided is a method of forming graphene. The method of forming graphene includes treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate, and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD).