The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Jan. 13, 2020
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Atsushi Sano, Toyama, JP;

Kimihiko Nakatani, Toyama, JP;

Tatsuru Matsuoka, Toyama, JP;

Kenji Kameda, Toyama, JP;

Satoshi Shimamoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0214 (2013.01); C23C 16/36 (2013.01); C23C 16/45553 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02222 (2013.01); H01L 21/02318 (2013.01);
Abstract

There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.


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