The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Nov. 16, 2017
International Business Machines Corporation, Armonk, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Nicolas L. Breil, Mountain View, CA (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The disclosure provides for a transistor which may include: a gate stack on a substrate, the gate stack including a gate dielectric and a gate electrode over the gate dielectric; a channel within the substrate and under the gate stack; a doped source and a doped drain on opposing sides of the channel, the doped source and the doped drain each including a dopant, wherein the dopant and the channel together have a first coefficient of diffusion and the doped source and the doped drain each have a second coefficient of diffusion; and a doped extension layer separating each of the doped source and the doped drain from the channel, the doped extension layer having a third coefficient of diffusion, wherein the third coefficient of diffusion is greater than the first coefficient of diffusion and the second coefficient of diffusion is less than the third coefficient of diffusion.