The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Dec. 17, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Nicolas J. Loubet, Guilderland, NY (US);
Xin Miao, Slingerlands, NY (US);
Alexander Reznicek, Troy, NY (US);
Assignee:
ELPIS TECHNOLOGIES INC., Ottawa, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/268 (2013.01); H01L 21/324 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 27/088 (2013.01);
Abstract
A device having co-integrated wimpy and nominal transistors includes first source/drain regions formed with a semiconductor alloy imparting strain into a first channel region. The device also has wimpy transistors including second source/drain regions formed with the semiconductor alloy that has been decomposed to include a larger amount of an electrically active atomic element than contained in the semiconductor alloy of the first source/drain region.