The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Jan. 15, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Christine Y Ouyang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C23C 16/0209 (2013.01); C23C 16/45525 (2013.01); H01L 21/0272 (2013.01); H01L 21/28247 (2013.01); H01L 21/31144 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method for forming a semiconductor structure is provided. The method includes forming a first material and a second material on a semiconductor substrate. The first material is different from the second material. The method also includes heating the first material to a first temperature and the second material to a second temperature with a laser beam. The first temperature is different from the second temperature. The method also includes depositing a third material on the first material.


Find Patent Forward Citations

Ouyang, Christine. (2021). Selective deposition by laser heating for forming a semiconductor structure (U.S. Patent No. 11087984). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11087984

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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