The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Jun. 22, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Chiang Tsai, Hsinchu, TW;
Fu-Hsiang Su, Zhubei, TW;
Ke-Jing Yu, Kaohsiung, TW;
Chih-Hong Hwang, New Taipei, TW;
Jyh-Huei Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes an insulating layer over a substrate, a gate stack formed in the insulating layer, and an insulating capping layer formed in the insulating layer to cover the gate stack. The semiconductor device structure also includes a source/drain contact structure adjacent to the gate stack. The source/drain contact structure has a sidewall that is in direct contact with a sidewall of the insulating capping layer, and an upper surface that is substantially level with an upper surface of the insulating capping layer and an upper surface of the insulating layer. In addition, the semiconductor device structure includes a first via structure above and electrically connected to the gate stack and a second via structure above and electrically connected to the source/drain contact structure.