The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Jun. 18, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ravi K. Bonam, Albany, NY (US);

Kamal K. Sikka, Poughkeepsie, NY (US);

Joshua M. Rubin, Albany, NY (US);

Iqbal Rashid Saraf, Cobleskill, NY (US);

Fee Li Lie, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/473 (2006.01); H01L 21/768 (2006.01); F28F 3/12 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); F28F 3/12 (2013.01); H01L 21/76816 (2013.01); F28F 2260/02 (2013.01);
Abstract

Embodiments of the present invention are directed to microchannels having varied critical dimensions for efficient cooling of semiconductor integrated circuit chip packages. In a non-limiting embodiment of the invention, a patterning stack is formed over a substrate. The patterning stack includes a hard mask, an etch transfer layer on the hard mask, and a photoresist on the etch transfer layer. A manifold trench is formed in a first region of the substrate and is recessed below a surface of the etch transfer layer. A microchannel trench is formed in a second region of the substrate to expose the surface of the etch transfer layer. The manifold trench and the microchannel trench are recessed such that the manifold trench extends into the hard mask and the microchannel trench extends into the etch transfer layer. A manifold and a microchannel are formed in the substrate by pattern transfer.


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