The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Jan. 08, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Dandan Shi, Wuhan, CN;
Ming Hu, Wuhan, CN;
Shijin Luo, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Zhi Zhang, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 29/1037 (2013.01); H01L 29/66545 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
Aspects of the disclosure provide a method for wafer warpage control. The method includes forming a filling structure in a slit opening on a wafer. Further, the method includes measuring a warpage parameter of the wafer, and determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter. Then, the method includes performing a process having the determined thermal profile to adjust the warpage parameter into the target range.