The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Sep. 13, 2019
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Yuki Yamakado, Toyama, JP;

Masanori Nakayama, Toyama, JP;

Katsunori Funaki, Toyama, JP;

Tatsushi Ueda, Toyama, JP;

Yasutoshi Tsubota, Toyama, JP;

Eiko Takami, Toyama, JP;

Yuichiro Takeshima, Toyama, JP;

Hiroto Igawa, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32449 (2013.01); H01L 21/67253 (2013.01); H01J 2237/3341 (2013.01);
Abstract

There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.


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