The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Nov. 19, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-An Liu, Hsinchu, TW;
Chan-Lon Yang, Taipei, TW;
Bharath Kumar Pulicherla, Hsinchu, TW;
Zhi-Qiang Wu, Hsinchu County, TW;
Chung-Cheng Wu, Hsinchu County, TW;
Chih-Han Lin, Hsinchu, TW;
Gwan-Sin Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a gate layer over a semiconductor fin; forming a patterned mask over the gate layer; performing a first etching process to pattern the gate layer using the patterned mask as an etch mask, the patterned gate layer comprising a first gate extending across the semiconductor fin; depositing, by using an directional ion beam, a protection layer to wrap around a top surface, a first sidewall and a second sidewall of the first gate, the protection layer extending along the first and second sidewalls of the first gate towards a bottom surface of the first gate without extending to the bottom surface of the first gate on the second sidewall of the first gate; and after depositing the protection layer, performing a second etching process to a portion of the second sidewall of the first gate exposed by the protection layer.