The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jul. 25, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Teng Liao, Hsinchu, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Xi-Zong Chen, Tainan, TW;
Chia-Ching Tsai, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a dummy gate stack over a semiconductor region, forming a gate spacer on a sidewall of the dummy gate stack, removing the dummy gate stack to form an opening, forming a replacement gate stack in the opening, recessing the replacement gate stack to form a recess, filling the recess with a conductive material, and performing a planarization to remove excess portions of the conductive material over the gate spacer. A remaining portion of the conductive material forms a gate contact plug. A top portion of the gate contact plug is at a same level as a top portion of the first gate spacer.