The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Oct. 14, 2019
Cree, Inc., Durham, NC (US);
Evan Jones, Durham, NC (US);
Terry Alcorn, Cary, NC (US);
Jia Guo, Apex, NC (US);
Fabian Radulescu, Chapel Hill, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.