The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Dec. 19, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Denzil S. Frost, Boise, ID (US);

Richard T. Housley, Boise, ID (US);

Jianming Zhou, Liaoning, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A method of forming an overlay alignment mark in the fabrication of integrated circuitry comprises forming a first series of periodically-horizontally-spaced lower first features on a substrate. A second series of periodically-horizontally-spaced upper second features is formed directly above the first series of the lower first features. Individual of the upper second features are directly above and cover at least a portion of individual of the lower first features in a first horizontal area of the substrate. Individual of the upper second features are not directly above and are not covering any portion of the individual lower first features in a second horizontal area of the substrate that is horizontally adjacent the first horizontal area. Other methods, and structure independent of method, are disclosed.


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