The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Mar. 09, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hoyong Park, Hwaseong-si, KR;
Namjun Kang, Bucheon-si, KR;
Dougyong Sung, Seoul, KR;
Seungbo Shim, Seoul, KR;
Junghyun Cho, Suwon-si, KR;
Myungsun Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.