The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Dec. 02, 2016
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Klaus Roettger, Bachmehring, DE;
Herbert Becker, Burghausen, DE;
Leszek Mistur, Burghausen, DE;
Andreas Muehe, Wetzlar, DE;
Assignee:
SILTRONIC AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/66 (2006.01); H01L 29/16 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02013 (2013.01); H01L 21/02016 (2013.01); H01L 21/02019 (2013.01); H01L 21/02021 (2013.01); H01L 21/02024 (2013.01); H01L 21/02052 (2013.01); H01L 21/3046 (2013.01); H01L 21/30625 (2013.01); H01L 21/67051 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 29/16 (2013.01);
Abstract
A monocrystalline semiconductor wafers have an average roughness Rof at most 0.8 nm at a limiting wavelength of 250 μm, and an ESFQRof 8 nm or less given an edge exclusion of 1 mm. The wafers are advantageously produced by a method comprising the following steps in the indicated order: