The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Aug. 30, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Thomas Behrens, Wenzenbach, DE;

Alexander Heinrich, Bad Abbach, DE;

Evelyn Napetschnig, Diex, AT;

Bernhard Weidgans, Bernhardswald, DE;

Catharina Wille, Regensburg, DE;

Christina Yeong, Johor, MY;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 35/26 (2006.01); C22C 13/02 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); B23K 35/262 (2013.01); C22C 13/02 (2013.01); H01L 24/83 (2013.01); H01L 2224/2922 (2013.01); H01L 2224/29211 (2013.01); H01L 2224/29239 (2013.01); H01L 2224/29244 (2013.01); H01L 2224/29247 (2013.01); H01L 2224/29255 (2013.01); H01L 2224/29264 (2013.01); H01L 2224/29269 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83455 (2013.01); H01L 2224/83815 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01);
Abstract

A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.


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