The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Jun. 12, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Wen-Kuei Liu, Xinpu Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/3081 (2013.01); H01L 21/31138 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 21/76847 (2013.01); H01L 21/76873 (2013.01);
Abstract
The present disclosure relates to a method of forming an interconnect structure. The method can include providing a semiconductor substrate; depositing a photoresist and a BARC layer on the semiconductor substrate; forming an opening in the photoresist and the BARC layer and a portion of the semiconductor substrate; depositing a conductive material to fill the opening; and planarizing the conductive material and the semiconductor substrate.