logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11063151 B1

PDFFull Text
Date of Patent:
Jul. 13, 2021

Filed:

Mar. 30, 2017

Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Jeffrey S. Leib, Beaverton, OR (US);

Daniel B. Bergstrom, Lake Oswego, OR (US);

Christopher J. Wiegand, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt P.C.

Primary Examiner:

Stephen W Smoot

Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02697 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/76816 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01); H01L 2029/7858 (2013.01);
Abstract

Metal chemical vapor deposition approaches for fabricating wrap-around contacts, and semiconductor structures having wrap-around metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor feature above a substrate. A dielectric layer is over the semiconductor feature, the dielectric layer having a trench exposing a portion of the semiconductor feature, the portion having a non-flat topography. A metallic contact material is directly on the portion of the semiconductor feature. The metallic contact material is conformal with the non-flat topography of the portion of the semiconductor feature. The metallic contact material has a total atomic composition including 95% or greater of a single metal species.

Find Patent Forward Citations

Loading…