The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Nov. 22, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Shin-Chuan Huang, Tainan, TW;
Chih-Tung Yeh, Taoyuan, TW;
Chun-Ming Chang, Kaohsiung, TW;
Bo-Rong Chen, Hsinchu County, TW;
Wen-Jung Liao, Hsinchu, TW;
Chun-Liang Hou, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/42356 (2013.01); H01L 29/66462 (2013.01); H01L 29/7781 (2013.01); H01L 29/7788 (2013.01);
Abstract
A high-electron mobility transistor includes a substrate; a buffer layer over the substrate; a GaN channel layer over the buffer layer; a AlGaN layer over the GaN channel layer; a gate recess in the AlGaN layer; a source region and a drain region on opposite sides of the gate recess; a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively; and a p-GaN gate layer in and on the gate recess.