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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11062908 B1

PDFFull Text
Date of Patent:
Jul. 13, 2021

Filed:

Oct. 08, 2019

Contact structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hong-Ying Lin, Hsinchu, TW;

Cheng-Yi Wu, Taichung, TW;

Alan Tu, Hsinchu, TW;

Chung-Liang Cheng, Changhua County, TW;

Li-Hsuan Chu, Taichung, TW;

Ethan Hsiao, Hsin-Chu, TW;

Hui-Lin Sung, Hsin-Chu, TW;

Sz-Yuan Hung, Hsin-Chu, TW;

Sheng-Yung Lo, Hsin-Chu, TW;

C. W. Chiu, Hsin-Chu, TW;

Chih-Wei Hsieh, Hsin-Chu, TW;

Chin-Szu Lee, Taoyuan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Duane Morris LLP

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 23/535 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); C23C 16/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/76805 (2013.01); H01L 21/76832 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53257 (2013.01); H01L 23/53295 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); C23C 16/16 (2013.01);
Abstract

A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

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