The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Jun. 30, 2017
Lam Research Corporation, Fremont, CA (US);
Yongsik Yu, Milpitas, CA (US);
David Wingto Cheung, Foster City, CA (US);
Kirk J. Ostrowski, San Jose, CA (US);
Nikkon Ghosh, San Jose, CA (US);
Karthik S. Colinjivadi, San Jose, CA (US);
Samantha Tan, Fremont, CA (US);
Nathan Musselwhite, Oakland, CA (US);
Mark Naoshi Kawaguchi, San Carlos, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.