The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Sep. 12, 2017
Intel Corporation, Santa Clara, CA (US);
Sasikanth Manipatruni, Hillsboro, OR (US);
Dmitri E. Nikonov, Beaverton, OR (US);
Uygar E. Avci, Portland, OR (US);
Christopher J. Wiegand, Portland, OR (US);
Anurag Chaudhry, Sunnyvale, CA (US);
Jasmeet S. Chawla, Beaverton, OR (US);
Ian A Young, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques are disclosed for forming semiconductor integrated circuits including one or more of source and drain contacts and gate electrodes comprising crystalline alloys including a transition metal. The crystalline alloys help to reduce contact resistance to the semiconductor devices. In some embodiments of the present disclosure, this reduction in contact resistance is accomplished by aligning the work function of the crystalline alloy with the work function of the source and drain regions such that a Schottky barrier height associated with an interface between the crystalline alloys and the source and drain regions is in a range of 0.3 eV or less.