The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Oct. 23, 2019
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Wei Jiang, Hsinchu, TW;
Jia-Rong Chiou, Zhubei, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 29/45 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 27/11565 (2013.01); H01L 29/40117 (2019.08); H01L 29/41741 (2013.01); H01L 29/4234 (2013.01); H01L 29/456 (2013.01);
Abstract
A memory device includes a channel element, a memory element, and an electrode element. The channel element has an open ring shape. A memory cell is defined in the memory element between the channel element and the electrode element.