The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Aug. 01, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/027 (2006.01); H01L 21/687 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01J 37/32 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 21/6833 (2013.01); H01J 37/32715 (2013.01); H01L 21/0273 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01L 21/6831 (2013.01); H01L 21/68792 (2013.01); H01L 21/768 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/3341 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.