The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Apr. 01, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.