The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Apr. 29, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Wen Huang, Tainan, TW;
Yun-Wen Chu, Kaohsiung, TW;
Hong-Hsien Ke, Changhua County, TW;
Chia-Hui Lin, Taichung, TW;
Shin-Yeu Tsai, Zhubei, TW;
Shih-Chieh Chang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.