The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Sep. 20, 2018
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Han-Liang Tseng, Hsinchu, TW;

Hsin-Hui Lee, Kaohsiung, TW;

Hsueh-Jung Lin, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/77 (2017.01); H01L 27/146 (2006.01); G02B 27/30 (2006.01); G02B 5/20 (2006.01); H01L 21/02 (2006.01); B41M 1/12 (2006.01); B41C 1/14 (2006.01); B41N 1/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/77 (2013.01); B41M 1/12 (2013.01); B41N 1/24 (2013.01); G02B 5/20 (2013.01); G02B 27/30 (2013.01); H01L 21/02002 (2013.01); H01L 27/14601 (2013.01); H01L 27/14625 (2013.01); H01L 27/14678 (2013.01);
Abstract

A method for forming a semiconductor device is provided. The method includes providing a substrate, placing a first stencil having a first openwork pattern on the substrate, applying a first material onto the substrate through the first stencil, and removing the first stencil from the substrate. The first material includes a transparent material. The method also includes placing a second stencil having a second openwork pattern on the substrate, applying a second material onto the substrate through the second stencil, and removing the second stencil from the substrate. The second material includes a light-shielding material, and the second openwork pattern is different from the first openwork pattern.


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