The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Apr. 04, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yu Nagatomo, Shanghai, CN;

Takahiko Kato, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01J 37/32834 (2013.01); H01L 21/32139 (2013.01); H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H01L 22/26 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method of processing a workpiece includes: forming a ruthenium film on the workpiece and disposing a mask on the ruthenium film; etching the ruthenium film through a plasma processing; forming a protective film on the workpiece through an atomic layer deposition method, the protective film including a first region extending along a side wall surface of the mask and a second region extending over the ruthenium film; and etching the protective film so as to remove the second region while leaving the first region. The etching the ruthenium film includes a first step of etching the ruthenium film through a plasma processing using an oxygen-containing gas, and a second step of etching the ruthenium film through a plasma processing using a chlorine-containing gas. The first step and the second step are alternately performed.


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