The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Oct. 08, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jean-Pierre Colinge, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA (US);
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02592 (2013.01); H01L 21/02636 (2013.01); H01L 21/02667 (2013.01); H01L 21/26513 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/665 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01);
Abstract
Semiconductor structures and methods reduce contact resistance, while retaining cost effectiveness for integration into the process flow by introducing a heavily-doped contact layer disposed between two adjacent layers. The heavily-doped contact layer may be formed through a solid-phase epitaxial regrowth method. The contact resistance may be tuned by adjusting dopant concentration and contact area configuration of the heavily-doped epitaxial contact layer.