The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Jul. 03, 2018
Texas Instruments Incorporated, Dallas, TX (US);
Jonathan Almeria Noquil, Bethlehem, PA (US);
Osvaldo Jorge Lopez, Annandale, NJ (US);
Haian Lin, Bethlehem, PA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A power converter () comprising a semiconductor chip () with a first () and a parallel second () surface, and through-silicon vias (TSVs,). The chip embedding a high-side (HS) field-effect transistor (FET) interconnected with a low side (LS) FET. Surface () includes first metallic pads () as inlets of the TSVs, and an attachment site for an integrated circuit (IC) chip (). Surface () includes second metallic pads () as outlets of the TSVs, and third metallic pads as terminals of the converter: Pad () as HS FET inlet, pad () as HS FET gate, pad () as LS FET outlet, pad () as LS FET gate, and gate () as common HS FET and LS FET switch-node. Driver-and-controller IC chip) has the IC terminals connected to respective first pads.