The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
May. 20, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chia-Pang Kuo, Taoyuan, TW;
Ya-Lien Lee, Baoshan Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76862 (2013.01); H01L 21/28556 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 23/53238 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method for forming a semiconductor device includes forming a barrier layer over a dielectric layer, a concentration of an impurity in the barrier layer increasing as the barrier layer extends away from the dielectric layer; and performing a plasma process to treat the barrier layer.