The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Sep. 09, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zhiyuan Wu, San Jose, CA (US);

Nikolaos Bekiaris, Campbell, CA (US);

Mehul B. Naik, San Jose, CA (US);

Jin Hee Park, Santa Clara, CA (US);

Mark Hyun Lee, Mountain View, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/288 (2006.01); H01L 21/285 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/2885 (2013.01); H01L 21/28568 (2013.01); H01L 21/67207 (2013.01); H01L 21/76862 (2013.01); H01L 21/76864 (2013.01); H01L 21/76873 (2013.01); H01L 21/76876 (2013.01); H01L 21/76882 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53252 (2013.01); H01L 21/28556 (2013.01); H01L 21/67167 (2013.01); H01L 21/67184 (2013.01); H01L 21/76856 (2013.01);
Abstract

In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.


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