The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Feb. 15, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsueh-Wen Tsau, Miaoli County, TW;
Chun-I Wu, Taipei, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
I-Ming Chang, ShinChu, TW;
Chung-Liang Cheng, Changhua County, TW;
Chih-Cheng Lin, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a substrate and an insulating layer over the substrate. The insulating layer has a trench partially exposing the substrate. The method includes forming a gate dielectric layer in the trench. The method includes forming a first metal-containing layer over the gate dielectric layer. The method includes forming a silicon-containing layer over the first metal-containing layer. The method includes forming a second metal-containing layer over the silicon-containing layer. The method includes forming a gate electrode layer in the trench and over the second metal-containing layer.