The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Aug. 02, 2019
International Business Machines Corporation, Armonk, NY (US);
Hari Prasad Amanapu, Albuquerque, NM (US);
Cornelius Brown Peethala, Slingerlands, NY (US);
Iqbal Rashid Saraf, Cobleskill, NY (US);
Raghuveer Reddy Patlolla, Guilderland, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for planarization of dielectric topography that stop in dielectric are provided. In one aspect, a method for planarization includes: depositing a first dielectric onto a wafer having a surface topography with peaks and valleys; depositing a second, different dielectric onto the first dielectric; and polishing the second dielectric down to the first dielectric to form a planar surface at an interface between the first dielectric and the second dielectric. Optionally, a follow-up CMP or etch can be performed using a ˜1:1 selective polish or etch to completely remove the second dielectric and an equivalent amount of the first dielectric to form a planar surface devoid of the peaks and valleys in the first dielectric. A device structure formed by the present techniques is also provided.