The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Dec. 05, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Toshio Haga, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01J 2237/002 (2013.01); H01J 2237/334 (2013.01);
Abstract

There is provision of a method of controlling a plasma processing apparatus including a chamber in which a plasma is generated, a substrate holder, a radio frequency power supply configured to supply radio frequency electric power to the substrate holder, a matching device provided between the substrate holder and the radio frequency power supply. The method includes acquiring output impedance of the matching device in a state in which impedance matching is achieved; obtaining F-parameters indicating electrical characteristics of the chamber; calculating a degree of high harmonic component generation; and controlling the output impedance of the matching device based on the degree of high harmonic component generation.


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