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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11037287 B1

PDFFull Text
Date of Patent:
Jun. 15, 2021

Filed:

Apr. 29, 2019

Method for measuring critical dimension and image-processing apparatus for measuring critical dimension

Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Ching-Ya Huang, Taichung, TW;

Tso-Hua Hung, Taichung, TW;

Assignee:

WINBOND ELECTRONICS CORP., Taichung, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Joshua L Schwartz

Int. Cl.
CPC ...
G06T 7/00 (2017.01); G06T 7/13 (2017.01); G06T 7/50 (2017.01); G06T 5/00 (2006.01); G06T 5/20 (2006.01); H01J 37/22 (2006.01); H01J 37/28 (2006.01); G06T 7/187 (2017.01);
U.S. Cl.
CPC ...
G06T 7/0004 (2013.01); G06T 5/002 (2013.01); G06T 5/003 (2013.01); G06T 5/20 (2013.01); G06T 7/13 (2017.01); G06T 7/187 (2017.01); G06T 7/50 (2017.01); H01J 37/222 (2013.01); H01J 37/28 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/20061 (2013.01); G06T 2207/20156 (2013.01); G06T 2207/30148 (2013.01); H01J 2237/2813 (2013.01);
Abstract

A method for measuring critical dimension is provided. The method includes the steps of: receiving a critical-dimension scanning electron microscopy (CD-SEM) image of a semiconductor wafer; performing an image-sharpening process and an image de-noise process on the CD-SEM image to generate a first image; performing an edge detection process on the first image to generate a second image; performing a connected-component labeling process on the second image to generate an output image; and calculating a critical-dimension information table of the semiconductor wafer according to the output image.

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Huang, Ching-Ya. (2021). Method for measuring critical dimension and image-processing apparatus for measuring critical dimension (U.S. Patent No. 11037287). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11037287

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