The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Dec. 06, 2018
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chung-Yang Huang, Chiayi County, TW;
Hao-Ming Chang, Pingtung, TW;
Ming Che Li, Hsinchu, TW;
Yu-Hsin Hsu, Taichung, TW;
Po-Cheng Lai, Hsinchu, TW;
Kuan-Shien Lee, Taichung, TW;
Wei-Hsin Lin, Hsinchu, TW;
Yi-Hsuan Lin, Hsinchu, TW;
Wang Cheng Shih, Hsinchu, TW;
Cheng-Ming Lin, Yunlin County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for forming a photomask includes receiving a substrate having a first layer formed thereon, wherein a patterned second layer exposing portions of the first layer is disposed over the substrate, removing the exposed portions of the first layer through the patterned second layer to form a plurality of openings in the first layer, removing the patterned second layer, and performing a wet etching to remove portions of the first layer to widen the plurality of openings with an etchant. The etchant is in contact with a top surface of the first layer and sidewalls of the plurality of openings. Each of the plurality of openings has a first width prior to the performing of the wet etching and a second width after the performing of the wet etching. The second width is greater than the first width.