The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Oct. 04, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Fan Huang, Kaohsiung, TW;
Chih-Yang Pai, Hsinchu, TW;
Yuan-Yang Hsiao, Taipei, TW;
Tsung-Chieh Hsiao, Shetou Township, Changhua County, TW;
Hui-Chi Chen, Zhudong Township, Hsinchu County, TW;
Dian-Hau Chen, Hsinchu, TW;
Yen-Ming Chen, Chupei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a substrate, and the substrate includes a capacitor region and a non-capacitor region. The MIM capacitor structure includes a first electrode layer formed over the substrate, and a first spacer formed on a sidewall of the first electrode layer. The MIM capacitor structure includes a first dielectric layer formed on the first spacers, and a second electrode layer formed on the first dielectric layer. The second electrode layer extends from the capacitor region to the non-capacitor region, and the second electrode layer extends beyond an outer sidewall of the first spacer.