The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jun. 17, 2019
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventors:
Michael Grobis, Campbell, CA (US);
Joyeeta Nag, San Jose, CA (US);
Derek Stewart, Livermore, CA (US);
Assignee:
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01F 10/32 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2427 (2013.01); H01F 10/3254 (2013.01); H01L 27/224 (2013.01); H01L 27/2463 (2013.01); H01L 43/02 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01); H01F 10/3286 (2013.01); H01L 43/10 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01);
Abstract
A memory device includes a plurality of memory cells, and an isolation material portion located between the memory cells. The isolation material portion includes at least one ovonic threshold switch material portion.