The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Feb. 06, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chien-Kuo Su, Luzhu Township, TW;
Cheng Hung Lee, Hsinchu, TW;
Chiting Cheng, Taichung, TW;
Hung-Jen Liao, Hsinchu, TW;
Jonathan Tsung-Yung Chang, Hsinchu, TW;
Yen-Huei Chen, Jhudong Township, TW;
Pankaj Aggarwal, Zhudong Township, TW;
Jhon Jhy Liaw, Zhudong Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory macro includes a first memory cell array, a first tracking circuit, a first and a second transistor. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first control signal, a second set of memory cells configured as a first set of pull-down cells responsive to a second control signal, and a first tracking bit line extending over the first tracking circuit. The second control signal is inverted from the first control signal. At least the first set of pull-down cells or the first set of loading cells is configured to track a memory cell of the first memory cell array. The first and second transistor are coupled to the first tracking bit line, and are configured to charge the first tracking bit line to a pre-charge voltage level responsive to a third control signal.