The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Sep. 03, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Zhi-Qiang Wu, Hsinchu County, TW;
Kuo-An Liu, Hsinchu, TW;
Chan-Lon Yang, Taipei, TW;
Bharath Kumar Pulicherla, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Chung-Cheng Wu, Hsinchu County, TW;
Gwan-Sin Chang, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a dummy gate over a substrate. A pair of gate spacers are formed on opposite sidewalls of the dummy gate. The dummy gate is removed to form a trench between the gate spacers. A first ion beam is directed to an upper portion of the trench, while leaving a lower portion of the trench substantially free from incidence of the first ion beam. The substrate is moved relative to the first ion beam during directing the first ion beam to the trench. A gate structure is formed in the trench.