The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Jul. 26, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takuya Abe, Nirasaki, JP;
Hidenori Miyoshi, Nirasaki, JP;
Akitaka Shimizu, Nirasaki, JP;
Koichi Nagakura, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 27/11582 (2013.01);
Abstract
There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.