The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Jul. 27, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Wei Su, Taoyuan, TW;
Fu-Ting Yen, Hsinchu, TW;
Ting-Ting Chen, New Taipei, TW;
Teng-Chun Tsai, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/3205 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/0206 (2013.01); H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/28079 (2013.01); H01L 21/28556 (2013.01); H01L 21/3105 (2013.01); H01L 21/31058 (2013.01); H01L 21/31116 (2013.01); H01L 21/321 (2013.01); H01L 21/32051 (2013.01); H01L 21/32135 (2013.01); H01L 29/6656 (2013.01); H01L 21/32 (2013.01); H01L 29/66795 (2013.01);
Abstract
A semiconductor device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, an inhibitor residue over gate structure and between the gate spacers, and source/drain structures on opposite sides of the gate structure. The inhibitor residue lines a sidewall of one of the gate spacers.