The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Aug. 12, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Chun Yu Wong, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Yong Jun Shi, Clifton Park, NY (US);
Xiaoming Yang, Ballston Lake, NY (US);
Liu Jiang, Clifton Park, NY (US);
GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);
Abstract
A semiconductor device is provided, which includes an active region, a first structure, a second gate structure, a first gate dielectric sidewall, a second gate dielectric sidewall, a first air gap region, a second air gap region and a contact structure. The active region is formed over a substrate. The first and second gate structures are formed over the active region and between the first gate structure and the second gate structure are the first gate dielectric sidewall, the first air gap region, the contact structure, the second air gap region and a second gate dielectric sidewall.