The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Sep. 25, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kuei-Sung Chang, Kaohsiung, TW;

Te-Hao Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); B81C 1/00 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/06 (2013.01); B81C 1/00619 (2013.01); H01L 21/7813 (2013.01); B81B 2203/033 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to a method of semiconductor processing. The method may be performed by etching a substrate to define a trench within the substrate. A sacrificial material is formed within the trench. The sacrificial material has an exposed upper surface. A plurality of discontinuous openings are formed to expose separate segments of a sidewall of the sacrificial material. The plurality of discontinuous openings are separated by non-zero distances along a length of the trench. An etching process is performed to simultaneously etch the exposed upper surface and the sidewall of the sacrificial material.


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